AMD and IBM Detail Early Results Using Immersion and Ultra Low-K in 45NM Chips
"At the International Electron Device Meeting (IEDM) today, IBM (NYSE: IBM) and AMD (NYSE: AMD) presented papers describing the use of immersion lithography, ultra-low-K interconnect dielectrics, and multiple enhanced transistor strain techniques for application to the 45nm microprocessor process generation. AMD and IBM expect the first 45nm products using immersion lithography and ultra-low-K interconnect dielectrics to be available in mid-2008."
More @ AMD's Pressroom
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